湖南大學(xué)電氣與信息工程學(xué)院導(dǎo)師：王俊 正文

[導(dǎo)師姓名]
王俊

[所屬院校]
湖南大學(xué)

[基本信息]
導(dǎo)師姓名：王俊
性別：
人氣指數(shù)：1926
所屬院校：湖南大學(xué)
所屬院系：電氣與信息工程學(xué)院
職稱：教授
導(dǎo)師類型：博導(dǎo)
招生專業(yè)：

[通訊方式]
電子郵件：junwang@hnu.edu.cn

[個(gè)人簡(jiǎn)述]
王俊，男，漢族，1979年7月出生于湖北省黃岡市，湖南大學(xué)電氣與信息工程學(xué)院教授、博士生導(dǎo)師。

[科研工作]
1. L. iao, J. Wang, S. Tang, Z. Shuai, X. Yin, J. Shen, A New Proportional Base Drive Technique for SiC Bipolar Junction Transistor, IEEE Transactions on Power Electronics, 2016.2. 唐賽，王俊，沈征，劉江。新型碳化硅雙極結(jié)型晶體管自適應(yīng)驅(qū)動(dòng)電路，電力電子技術(shù)，2016, 50（6）.3. J. Wang, S. Xu, J. Korec, “Power MOSFET with Integrated Gate Resistor and Diode-Connected MOSFET”, United States Patent 8614480.4. J. Korec, S. Xu, J. Wang, B. Yang, “Capacitors and Methods of Forming”, United States Patent 8722503.5. Y. Du, J. Wang, G. Wang, A. Q. Huang, "Modeling of the High-Frequency Rectifier With 10-kV SiC JBS Diodes in High-Voltage Series Resonant Type DC-DC Converters", IEEE Transactions on Power Electronics, vol. 29, no. 8, August 2014, pp.4288-4300. 6. B. Yang, J. Wang, S. Xu, J. Korec, Z. Shen, "Advanced Low-Voltage Power MOSFET Technology for Power Supply in Package Applications", IEEE Transactions on Power Electronics, vol. 28, no. 9, September 2013, pp.4202-4215. 7. J. Wang, A. Q. Huang, W. Sung, Y. Liu, B. J. Baliga, “Smart grid technologies,” IEEE Industrial Electronics Magazine, vol. 2, no. 2, Jun. 2009, pp. 16-23. 8. J. Wang, A. Q. Huang, “Design and Characterization of High Voltage Silicon Carbide Emitter Turn-off Thyristor (SiC ETO),” IEEE Transaction on Power Electronics, vol. 24, no. 5, May 2009, pp. 1189-1197. 9. J. Wang, T. Zhao, A. Q. Huang, R. Callanan, A. Agarwal, “Characterization, Modeling and Application of 10 kV SiC MOSFET,” IEEE Transactions on Electron Devices, vol. 55, no. 8, pp. 1798-1806, Aug. 2008. 10. J. Wang, A. Q. Huang, S. Atcitty, I. Gyuk, “Silicon Carbide Emitter Turn-off Thyristor (SiC ETO),” International Journal of Power Management Electronics, Volume 2008, Article ID 891027, 5 pages, 2008.11. J. Wang, J. Li, T. Zhao, A. Q. Huang, R. Callanan, F. Husna, A. Agarwal, “10 kV SiC MOSFET Based Boost Converter,” IEEE Transaction on Industry Applications, vol. 45, no. 6, pp. 2056-2063, September, 2009. 12. J. Wang, D. Zhao, Y. Sun, Wang, S. Zhang, H. Yang, S. Zhou and M. Wu, “Thermal annealing behavior of Pt on n-GaN Schottky contacts,” JOURNAL OF PHYSICS D: APPLIED PHYSICS, Vol. 36, 2003, pp. 1018-1022. 13. J. Wang, D. Zhao, Z. Liu, G. Feng, J. Zhu, X. Shen, B. Zhang and H. Yang, “Metal-semiconductor-metal ultraviolet photodetector based on GaN,” Science in China (Series G), Vol. 46, No. 2, 2003, pp. 198-203.14. Q. Zhang, J. Wang, A. Agarwal, J. Palmour, A. Q. Huang, et al., “Design and Characterization of High Voltage 4H-SiC p-IGBTs,” IEEE Transactions on Electron Devices, vol. 55, No. 8, Aug. 2008, pp. 1912-1919.

[教育背景]
1996.9—2000.7 中國(guó) 華中科技大學(xué) 電子科學(xué)與技術(shù)系 學(xué)士；
2000.9—2003.7 中國(guó) 中國(guó)科學(xué)院半導(dǎo)體研究所 固體電與微電子學(xué)專業(yè) 碩士；
2003.8—2005.5 美國(guó) 南卡羅萊納大學(xué) 電子工程專業(yè) 碩士；
2005.6—2009.12 美國(guó) 北卡羅萊納州立大學(xué) 電子工程專業(yè) 博士。 以上老師的信息來(lái)源于學(xué)校網(wǎng)站，如有更新或錯(cuò)誤，請(qǐng)聯(lián)系我們進(jìn)行更新或刪除，聯(lián)系方式

湖南大學(xué)

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